PSMN006-20K,518

new-10%

Manufacturer part number:PSMN006-20K,518

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 20V 32A 8-SOIC

Case Package:SOT-23

Datasheet:PSMN006-20K,518 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	TrenchMOS™
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	2 (1 Year)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	NICKEL PALLADIUM GOLD
Additional Feature	LOW THRESHOLD
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	R-PDSO-G8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	8.3W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4350pF @ 20V
Current - Continuous Drain (Id) @ 25°C	32A Tc
Gate Charge (Qg) (Max) @ Vgs	32nC @ 2.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±10V
JEDEC-95 Code	MS-012AA
Drain Current-Max (Abs) (ID)	32A
Drain-source On Resistance-Max	0.0082Ohm
Pulsed Drain Current-Max (IDM)	60A
DS Breakdown Voltage-Min	20V
RoHS Status	Non-RoHS Compliant