PSMN1R0-30YLC,115 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PSMN1R0-30YLC,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
1.15MOhm
Terminal Finish
Tin (Sn)
Additional Feature
HIGH RELIABILITY, ULTRA LOW RESISTANCE
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Pin Count
4
JESD-30 Code
R-PSSO-G4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
272W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
137W
Case Connection
DRAIN
Turn On Delay Time
44 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.15m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
6645pF @ 15V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
103.5nC @ 10V
Rise Time
77ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
60 ns
Turn-Off Delay Time
108 ns
Continuous Drain Current (ID)
100A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
30V
Drain to Source Breakdown Voltage
30V
Avalanche Energy Rating (Eas)
259 mJ
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PSMN1R0-30YLC,115 Product Details
PSMN1R0-30YLC,115 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 259 mJ.An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6645pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 108 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 44 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 30V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
PSMN1R0-30YLC,115 Features
the avalanche energy rating (Eas) is 259 mJ a continuous drain current (ID) of 100A a drain-to-source breakdown voltage of 30V voltage the turn-off delay time is 108 ns
PSMN1R0-30YLC,115 Applications
There are a lot of Nexperia USA Inc. PSMN1R0-30YLC,115 applications of single MOSFETs transistors.
Server power supplies
LCD/LED TV
Micro Solar Inverter
Load switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,