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PSMN1R0-30YLC,115

PSMN1R0-30YLC,115

PSMN1R0-30YLC,115

Nexperia USA Inc.

PSMN1R0-30YLC,115 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PSMN1R0-30YLC,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 1.15MOhm
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY, ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 272W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 137W
Case Connection DRAIN
Turn On Delay Time 44 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.15m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6645pF @ 15V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 103.5nC @ 10V
Rise Time 77ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 108 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 259 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,500 $0.58410 $0.5841
3,000 $0.54516 $1.63548
7,500 $0.51790 $3.6253
10,500 $0.49843 $4.9843
PSMN1R0-30YLC,115 Product Details

PSMN1R0-30YLC,115 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 259 mJ.An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6645pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 108 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 44 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 30V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

PSMN1R0-30YLC,115 Features


the avalanche energy rating (Eas) is 259 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 108 ns

PSMN1R0-30YLC,115 Applications


There are a lot of Nexperia USA Inc. PSMN1R0-30YLC,115 applications of single MOSFETs transistors.

  • Server power supplies
  • LCD/LED TV
  • Micro Solar Inverter
  • Load switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Power Tools
  • Power Management Functions
  • AC-DC Power Supply
  • Lighting, Server, Telecom and UPS.
  • Lighting

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