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PSMN2R2-30YLC,115

PSMN2R2-30YLC,115

PSMN2R2-30YLC,115

Nexperia USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.15m Ω @ 25A, 10V ±20V 3310pF @ 15V 55nC @ 10V SC-100, SOT-669

SOT-23

PSMN2R2-30YLC,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 141W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 141W
Case Connection DRAIN
Turn On Delay Time 26 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.15m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 36ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0028Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 765A
Avalanche Energy Rating (Eas) 92 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $122.569760 $122.56976
10 $115.631849 $1156.31849
100 $109.086650 $10908.665
500 $102.911934 $51455.967
1000 $97.086730 $97086.73
PSMN2R2-30YLC,115 Product Details

PSMN2R2-30YLC,115 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 92 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3310pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 47 ns.Peak drain current for this device is 765A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 26 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

PSMN2R2-30YLC,115 Features


the avalanche energy rating (Eas) is 92 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 47 ns
based on its rated peak drain current 765A.


PSMN2R2-30YLC,115 Applications


There are a lot of Nexperia USA Inc.
PSMN2R2-30YLC,115 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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