PSMN3R3-80ES,127

new-10%

Manufacturer part number:PSMN3R3-80ES,127

Manufacturer:Nexperia USA Inc.

Description:PSMN3R3-80ES - N-channel 80 V, 3.3 m? standard level MOSFET in I2PAK

Case Package:SOT-23

Datasheet:PSMN3R3-80ES,127 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	338W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	338W
Case Connection	DRAIN
Turn On Delay Time	41 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.3m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	9961pF @ 40V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	139nC @ 10V
Rise Time	43ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	44 ns
Turn-Off Delay Time	109 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	80V
Drain to Source Breakdown Voltage	80V
Avalanche Energy Rating (Eas)	676 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant