BSH205,215

new-10%

Manufacturer part number:BSH205,215

Manufacturer:NXP USA Inc.

Description:NXP BSH205,215MOSFET Transistor, P Channel, 750 mA, -12 V, 180 mohm, -4.5 V, 680 mV

Case Package:SOT-23

Datasheet:BSH205,215 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1998
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
HTS Code	8541.21.00.95
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	417mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	400m Ω @ 430mA, 4.5V
Vgs(th) (Max) @ Id	680mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 9.6V
Current - Continuous Drain (Id) @ 25°C	750mA Ta
Gate Charge (Qg) (Max) @ Vgs	3.8nC @ 4.5V
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Drain Current-Max (Abs) (ID)	0.75A
Drain-source On Resistance-Max	0.5Ohm
DS Breakdown Voltage-Min	12V
RoHS Status	ROHS3 Compliant