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IRF820ASPBF

IRF820ASPBF

IRF820ASPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 3Ohm @ 1.5A, 10V ±30V 340pF @ 25V 17nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

IRF820ASPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Power Dissipation 50W
Turn On Delay Time 8.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 30V
Input Capacitance 340pF
Drain to Source Resistance 3Ohm
Rds On Max 3 Ω
Height 4.83mm
Length 10.67mm
Width 9.65mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.92000 $1.92
50 $1.54540 $77.27
100 $1.35840 $135.84
500 $1.06434 $532.17
1,000 $0.85050 $0.8505
2,500 $0.79704 $1.59408
5,000 $0.75962 $3.7981
IRF820ASPBF Product Details

IRF820ASPBF Overview


A device's maximal input capacitance is 340pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.5A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 16 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 3Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.1 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4.5V threshold voltage.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRF820ASPBF Features


a continuous drain current (ID) of 2.5A
the turn-off delay time is 16 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of 4.5V
a 500V drain to source voltage (Vdss)


IRF820ASPBF Applications


There are a lot of Vishay Siliconix
IRF820ASPBF applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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