SI2301BDS-T1-E3

new-10%

Manufacturer part number:SI2301BDS-T1-E3

Manufacturer:Vishay Siliconix

Description:VISHAY - SI2301BDS-T1-E3 - P CHANNEL MOSFET, FULL REEL

Case Package:SOT-23

Datasheet:SI2301BDS-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	100MOhm
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	700mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700mW
Turn On Delay Time	20 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	100m Ω @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	375pF @ 6V
Current - Continuous Drain (Id) @ 25°C	2.2A Ta
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Rise Time	40ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	-2.2A
Threshold Voltage	-950mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-950 mV
Height	1.12mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free