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SSM3J332R,LF

SSM3J332R,LF

SSM3J332R,LF

Toshiba Semiconductor and Storage

P-Channel Tape & Reel (TR) 42m Ω @ 5A, 10V ±12V 560pF @ 15V 8.2nC @ 4.5V 30V SOT-23-3 Flat Leads

SOT-23

SSM3J332R,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series U-MOSVI
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 42m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 10V
Vgs (Max) ±12V
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) -6A
Threshold Voltage -500mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.042Ohm
Drain to Source Breakdown Voltage -22V
Max Junction Temperature (Tj) 150°C
Height 880μm
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.08000 $0.24
6,000 $0.07200 $0.432
15,000 $0.06400 $0.96
30,000 $0.06000 $1.8
75,000 $0.05600 $4.2
SSM3J332R,LF Product Details

SSM3J332R,LF Overview


The maximum input capacitance of this device is 560pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -6A.When VGS=-22V, and ID flows to VDS at -22VVDS, the drain-source breakdown voltage is -22V in this device.As shown in the table below, the drain current of this device is 6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -500mV volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (1.8V 10V), this device helps reduce its power consumption.

SSM3J332R,LF Features


a continuous drain current (ID) of -6A
a drain-to-source breakdown voltage of -22V voltage
the turn-off delay time is 75 ns
a threshold voltage of -500mV
a 30V drain to source voltage (Vdss)


SSM3J332R,LF Applications


There are a lot of Toshiba Semiconductor and Storage
SSM3J332R,LF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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