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BUK78150-55A,135

BUK78150-55A,135

BUK78150-55A,135

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 150m Ω @ 5A, 10V ±20V 230pF @ 25V 55V TO-261-4, TO-261AA

SOT-23

BUK78150-55A,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2010
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 8W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 5.5A
Drain-source On Resistance-Max 0.15Ohm
Pulsed Drain Current-Max (IDM) 22A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 25 mJ
RoHS Status ROHS3 Compliant
BUK78150-55A,135 Product Details

BUK78150-55A,135 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 25 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 230pF @ 25V.5.5A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 22A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 55V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.

BUK78150-55A,135 Features


the avalanche energy rating (Eas) is 25 mJ
based on its rated peak drain current 22A.
a 55V drain to source voltage (Vdss)


BUK78150-55A,135 Applications


There are a lot of NXP USA Inc.
BUK78150-55A,135 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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