TJ40S04M3L(T6L1,NQ

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Manufacturer part number:TJ40S04M3L(T6L1,NQ

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET P-CH 40V 40A DPAK-3

Case Package:SOT-23

Datasheet:TJ40S04M3L(T6L1,NQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Supplier Device Package	DPAK+
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	U-MOSVI
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	68W Tc
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	9.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4140pF @ 10V
Current - Continuous Drain (Id) @ 25°C	40A Ta
Gate Charge (Qg) (Max) @ Vgs	83nC @ 10V
Rise Time	46ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	+10V, -20V
Fall Time (Typ)	150 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	10V
Input Capacitance	4.14nF
Rds On Max	9.1 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant