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NTD4815NH-1G

NTD4815NH-1G

NTD4815NH-1G

ON Semiconductor

MOSFET N-CH 30V 6.9A IPAK

SOT-23

NTD4815NH-1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.26W Ta 32.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.92W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 845pF @ 12V
Current - Continuous Drain (Id) @ 25°C 6.9A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 4.5V
Rise Time 17.6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 17.6 ns
Turn-Off Delay Time 18.4 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.9A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 87A
Avalanche Energy Rating (Eas) 35.6 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.046349 $1.046349
10 $0.987122 $9.87122
100 $0.931247 $93.1247
500 $0.878535 $439.2675
1000 $0.828807 $828.807

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