SCTW40N120G2VAG

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Manufacturer part number:SCTW40N120G2VAG

Manufacturer:STMicroelectronics

Description:SCTW40N120G2VAG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:SCTW40N120G2VAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~200°C TJ
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	SiCFET (Silicon Carbide)
Reach Compliance Code	compliant
Power Dissipation-Max	290W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	105m Ω @ 20A, 18V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1230pF @ 800V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	63nC @ 18V
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	18V
Vgs (Max)	+22V, -10V

Quantity	Unit Price	Ext. Price
1	$23.12000	$23.12
500	$22.8888	$11444.4
1000	$22.6576	$22657.6
1500	$22.4264	$33639.6
2000	$22.1952	$44390.4
2500	$21.964	$54910

SCTW40N120G2VAG Description

This silicon carbide power MOSFET device is developed using advanced and innovative second generation silicon carbide MOSFET technology from STMicroelectronics. The device has extremely low on-resistance per unit area and very good switching performance. The change of switching loss has almost nothing to do with the junction temperature.