MRFE6VP61K25HR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRFE6VP61K25HR5 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
NI-1230
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
133V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Peak Reflow Temperature (Cel)
260
Frequency
230MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRFE6VP61K25
Operating Temperature (Max)
225°C
Current - Test
100mA
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS (Dual)
Gain
24dB
Power - Output
1250W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
1300W
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$158.88180
$7944.09
MRFE6VP61K25HR5 Product Details
MRFE6VP61K25HR5 Description
These highly durable devices are intended for use in high VSWR industrial applications, including as laser and plasma exciters, broadcast (analog and digital), aircraft, and radio/land mobile applications. They have mismatched input and output configurations that enable frequency ranges between 1.8 and 600 MHz to be utilized.
MRFE6VP61K25HR5 Features
Utilization of a Wide Frequency Range Due to Unmatched Input and Output
The device can be used in a push-pull or single-ended configuration.
Qualified Up to 50 VDD Operation Maximum
characterized by a longer power range of 30 to 50 V
Appropriate Biasing and Suitability for Linear Application