MRFE6VP6300HR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRFE6VP6300HR5 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
NI780-4
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
4
ECCN Code
EAR99
Voltage - Rated
130V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
230MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRFE6VP6300
JESD-30 Code
R-CDFM-F4
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
2
Configuration
COMMON SOURCE, 2 ELEMENTS
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
100mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS (Dual)
Gain
26.5dB
DS Breakdown Voltage-Min
130V
Power - Output
300W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$94.64460
$4732.23
100
$88.02610
$8802.61
MRFE6VP6300HR5 Product Details
MRFE6VP6300HR5 Description
MRFE6VP6300HR5 is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes MRFE6VP6300HR5 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRFE6VP6300HR5 has the common source configuration.
MRFE6VP6300HR5 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures