PBSS2540E,115 Overview

DC current gain in this device equals 100 @ 100mA 2V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 50mA, 500mA.In this part, there is a transition frequency of 450MHz.This device displays a 40V maximum voltage - Collector Emitter Breakdown.

PBSS2540E,115 Features

the DC current gain for this device is 100 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
a transition frequency of 450MHz

PBSS2540E,115 Applications

There are a lot of NXP USA Inc. PBSS2540E,115 applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter