Welcome to Hotenda.com Online Store!

logo
userjoin
Home

PBSS3515E,115

  • PBSS3515E,115
  • PBSS3515E,115

PBSS3515E,115

PBSS3515E,115

NXP USA Inc.

PBSS3515E,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available on our website

SOT-23

PBSS3515E,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PBSS3515
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 15V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 280MHz
Frequency - Transition 280MHz
Power Dissipation-Max (Abs) 0.25W
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.03000 $0.03
500 $0.0297 $14.85
1000 $0.0294 $29.4
1500 $0.0291 $43.65
2000 $0.0288 $57.6
2500 $0.0285 $71.25
PBSS3515E,115 Product Details

PBSS3515E,115 Overview


This device has a DC current gain of 150 @ 100mA 2V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 50mA, 500mA.In this part, there is a transition frequency of 280MHz.There is a 15V maximal voltage in the device due to collector-emitter breakdown.

PBSS3515E,115 Features


the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
a transition frequency of 280MHz

PBSS3515E,115 Applications


There are a lot of NXP USA Inc. PBSS3515E,115 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

Related Part Number

BC52-10PA,115
Nexperia USA Inc.
BC52-10PA,115
$0 $/piece
JANTXV2N3637
Microsemi Corporation
JANTXV2N3637
$0 $/piece
PMBT2222AYSX
Nexperia USA Inc.
PMBT2222AYSX
$0 $/piece
BC847C-TP
Micro Commercial Co
BC847C-TP
$0 $/piece
JANTXV2N5745
Microsemi Corporation
JANTXV2N5745
$0 $/piece
FMMT549TA
Diodes Incorporated
FMMT549TA
$0 $/piece
2SA1552S-TL-H
ON Semiconductor
2SA1552S-TL-H
$0 $/piece
BCX71K,215
Nexperia USA Inc.
BCX71K,215
$0 $/piece
BDX33CG
ON Semiconductor
BDX33CG
$0 $/piece
BC547ARLG
ON Semiconductor
BC547ARLG
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News