2SA1552S-TL-H Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

2SA1552S-TL-H Features

the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V

2SA1552S-TL-H Applications

There are a lot of ON Semiconductor 2SA1552S-TL-H applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface