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FMMT549TA

FMMT549TA

FMMT549TA

Diodes Incorporated

FMMT549TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT549TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Voltage - Rated DC -30V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT549
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 750mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 35V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -1A
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.061680 $0.06168
500 $0.045353 $22.6765
1000 $0.037794 $37.794
2000 $0.034674 $69.348
5000 $0.032405 $162.025
10000 $0.030144 $301.44
15000 $0.029153 $437.295
50000 $0.028666 $1433.3
FMMT549TA Product Details

FMMT549TA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 200mA, 2A.A -1A continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.This device can take an input voltage of 30V volts before it breaks down.Maximum collector currents can be below 1A volts.

FMMT549TA Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 750mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz

FMMT549TA Applications


There are a lot of Diodes Incorporated FMMT549TA applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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