FMMT549TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT549TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Voltage - Rated DC
-30V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT549
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
750mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
35V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-1A
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.061680
$0.06168
500
$0.045353
$22.6765
1000
$0.037794
$37.794
2000
$0.034674
$69.348
5000
$0.032405
$162.025
10000
$0.030144
$301.44
15000
$0.029153
$437.295
50000
$0.028666
$1433.3
FMMT549TA Product Details
FMMT549TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 200mA, 2A.A -1A continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.This device can take an input voltage of 30V volts before it breaks down.Maximum collector currents can be below 1A volts.
FMMT549TA Features
the DC current gain for this device is 100 @ 500mA 2V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 750mV @ 200mA, 2A the emitter base voltage is kept at 5V the current rating of this device is -1A a transition frequency of 100MHz
FMMT549TA Applications
There are a lot of Diodes Incorporated FMMT549TA applications of single BJT transistors.