BDX33CG Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 6mA, 3A.A 4A continuous collector voltage is necessary to achieve high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The current rating of this fuse is 10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 3MHz in the part.Maximum collector currents can be below 10A volts.

BDX33CG Features

the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz

BDX33CG Applications

There are a lot of ON Semiconductor BDX33CG applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting