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PHM15NQ20T,518

PHM15NQ20T,518

PHM15NQ20T,518

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 85m Ω @ 15A, 10V ±20V 2170pF @ 30V 40nC @ 10V 200V 8-VDFN Exposed Pad

SOT-23

PHM15NQ20T,518 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchMOS™
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Pin Count 8
JESD-30 Code R-PDSO-N8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 62.5W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2170pF @ 30V
Current - Continuous Drain (Id) @ 25°C 17.5A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 17.5A
Drain-source On Resistance-Max 0.085Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 210 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.330232 $0.330232
10 $0.311540 $3.1154
100 $0.293906 $29.3906
500 $0.277270 $138.635
1000 $0.261575 $261.575
PHM15NQ20T,518 Product Details

PHM15NQ20T,518 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 210 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2170pF @ 30V.17.5A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 60A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

PHM15NQ20T,518 Features


the avalanche energy rating (Eas) is 210 mJ
based on its rated peak drain current 60A.
a 200V drain to source voltage (Vdss)


PHM15NQ20T,518 Applications


There are a lot of NXP USA Inc.
PHM15NQ20T,518 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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