IPP084N06L3GHKSA1

new-10%

Manufacturer part number:IPP084N06L3GHKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220

Case Package:SOT-23

Datasheet:IPP084N06L3GHKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	unknown
Number of Elements	1
Power Dissipation-Max	79W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	79W
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.2V @ 34μA
Input Capacitance (Ciss) (Max) @ Vds	4900pF @ 30V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 4.5V
Rise Time	26ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	50A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0084Ohm
Pulsed Drain Current-Max (IDM)	200A
DS Breakdown Voltage-Min	60V
Height	15.95mm
Length	10.36mm
Width	4.57mm
RoHS Status	RoHS Compliant