STW43NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STW43NM60N Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
88mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STW43N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
255W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
255W
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
88m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4200pF @ 50V
Current - Continuous Drain (Id) @ 25°C
35A Tc
Gate Charge (Qg) (Max) @ Vgs
130nC @ 10V
Rise Time
45ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
60 ns
Turn-Off Delay Time
130 ns
Continuous Drain Current (ID)
17.5A
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Height
20.15mm
Length
15.75mm
Width
5.15mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
STW43NM60N Product Details
STW43NM60N Description
STW43NM60N belongs to the family of N-channel MDmesh? II power MOSFETs developed by STMicroelectronics. It is manufactured by STMicroelectronics based on its MDmesh? technology. It is able to provide lower on-resistance and superior switching performance based on the strip layout and improved vertical structure. As a result, it is well suited for high-efficiency converters.