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PHP101NQ03LT,127

PHP101NQ03LT,127

PHP101NQ03LT,127

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 5.5m Ω @ 25A, 10V ±20V 2180pF @ 25V 23nC @ 5V 30V TO-220-3

SOT-23

PHP101NQ03LT,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS™
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 166W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0075Ohm
Pulsed Drain Current-Max (IDM) 240A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 185 mJ
RoHS Status ROHS3 Compliant
PHP101NQ03LT,127 Product Details

PHP101NQ03LT,127 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 185 mJ.The maximum input capacitance of this device is 2180pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 75A.There is no pulsed drain current maximum for this device based on its rated peak drain current 240A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (5V 10V), this device helps reduce its power consumption.

PHP101NQ03LT,127 Features


the avalanche energy rating (Eas) is 185 mJ
based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)


PHP101NQ03LT,127 Applications


There are a lot of NXP USA Inc.
PHP101NQ03LT,127 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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