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PHX20N06T,127

PHX20N06T,127

PHX20N06T,127

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 75m Ω @ 10A, 10V ±20V 320pF @ 25V 9.8nC @ 10V 55V TO-220-3 Full Pack, Isolated Tab

SOT-23

PHX20N06T,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series TrenchMOS™
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 23W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12.9A Tc
Gate Charge (Qg) (Max) @ Vgs 9.8nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 12.9A
Drain-source On Resistance-Max 0.075Ohm
Pulsed Drain Current-Max (IDM) 51.6A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 30.3 mJ
RoHS Status ROHS3 Compliant
PHX20N06T,127 Product Details

PHX20N06T,127 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 30.3 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 320pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 12.9A.There is a peak drain current of 51.6A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 55V, it should remain above the 55V level.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

PHX20N06T,127 Features


the avalanche energy rating (Eas) is 30.3 mJ
based on its rated peak drain current 51.6A.
a 55V drain to source voltage (Vdss)


PHX20N06T,127 Applications


There are a lot of NXP USA Inc.
PHX20N06T,127 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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