PMN50XP,165

new-10%

Manufacturer part number:PMN50XP,165

Manufacturer:NXP USA Inc.

Description:MOSFET P-CH 20V 4.8A 6TSOP

Case Package:SOT-23

Datasheet:PMN50XP,165 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.75
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.2W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1020pF @ 20V
Current - Continuous Drain (Id) @ 25°C	4.8A Tc
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Drain Current-Max (Abs) (ID)	4.8A
Drain-source On Resistance-Max	0.06Ohm
Pulsed Drain Current-Max (IDM)	19.4A
DS Breakdown Voltage-Min	20V
RoHS Status	ROHS3 Compliant