STV160NF03LAT4

new-10%

Manufacturer part number:STV160NF03LAT4

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 30V 160A POWERSO-10

Case Package:SOT-23

Datasheet:STV160NF03LAT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerSO-10 Exposed Bottom Pad
Number of Pins	12
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	10
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Base Part Number	STV160
Pin Count	10
JESD-30 Code	R-PDSO-G10
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	210W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	210W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5350pF @ 25V
Current - Continuous Drain (Id) @ 25°C	160A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Rise Time	380ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±15V
Fall Time (Typ)	150 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	160A
Gate to Source Voltage (Vgs)	15V
Drain-source On Resistance-Max	0.004Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	640A
Avalanche Energy Rating (Eas)	330 mJ
RoHS Status	ROHS3 Compliant