Description

The TIP110 is an NPN Epitaxial Silicon Darlington Transistor designed for general-purpose amplifier and low-speed switching applications. The Darlington configuration (also known as a Darlington pair) is a multi-transistor arrangement in electronics that consists of two bipolar transistors with the emitter of one connected to the base of the other, amplifying the current amplified by the first transistor. Both transistors' collectors are interconnected. The current gain of this combination is substantially higher than the individual transistors.

Features

? Monolithic construction with built-in-base-emitter shunt resistor

? -65 to 150°C Operating junction temperature range

? Collector-emitter sustaining voltage-VCEO (sus) = 60V (Min.)

? Collector-emitter saturation voltage-VCE (sat) = 2.5V (Max.) at IC = 2A

? Monolithic construction with built-in-base-emitter shunt resistor

Applications

? Power Management

? Industrial

? General-purpose Amplifier

? Low Speed Switching Applications

? Audio Amplifiers