TIP126G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
TIP126G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
2W
Peak Reflow Temperature (Cel)
260
Current Rating
-5A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
TIP12*
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
65W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
4MHz
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
4V @ 20mA, 5A
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
1000
Continuous Collector Current
5A
Height
15.748mm
Length
10.2616mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.75000
$0.75
50
$0.62200
$31.1
100
$0.50770
$50.77
500
$0.40132
$200.66
1,000
$0.32105
$0.32105
TIP126G Product Details
TIP126G Overview
In this device, the DC current gain is 1000 @ 3A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 20mA, 5A.In order to achieve high efficiency, the continuous collector voltage should be kept at 5A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-5A).Maximum collector currents can be below 5A volts.
TIP126G Features
the DC current gain for this device is 1000 @ 3A 3V a collector emitter saturation voltage of 2V the vce saturation(Max) is 4V @ 20mA, 5A the emitter base voltage is kept at 5V the current rating of this device is -5A
TIP126G Applications
There are a lot of ON Semiconductor TIP126G applications of single BJT transistors.