2N3906TF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.The base voltage of the emitter can be kept at -5V to achieve high efficiency.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.250MHz is present in the transition frequency.As a result, it can handle voltages as low as 160V volts.The maximum collector current is 200mA volts.
2N3906TF Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906TF Applications
There are a lot of ON Semiconductor 2N3906TF applications of single BJT transistors.
- Interface
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- Muting
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- Inverter
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- Driver
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