MMBT6521LT1G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 2mA 10V.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 4V allows for a high level of efficiency.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In extreme cases, the collector current can be as low as 100mA volts.

MMBT6521LT1G Features

the DC current gain for this device is 300 @ 2mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA

MMBT6521LT1G Applications

There are a lot of ON Semiconductor MMBT6521LT1G applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting