MMBT6521LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT6521LT1G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
25V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 2mA 10V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
4V
hFE Min
150
Radiation Hardening
No
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.07224
$0.21672
6,000
$0.06502
$0.39012
15,000
$0.05779
$0.86685
30,000
$0.05418
$1.6254
75,000
$0.04816
$3.612
MMBT6521LT1G Product Details
MMBT6521LT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 2mA 10V.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 4V allows for a high level of efficiency.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In extreme cases, the collector current can be as low as 100mA volts.
MMBT6521LT1G Features
the DC current gain for this device is 300 @ 2mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at 4V the current rating of this device is 100mA
MMBT6521LT1G Applications
There are a lot of ON Semiconductor MMBT6521LT1G applications of single BJT transistors.