DXT2014P5-13 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 5V.With a collector emitter saturation voltage of -360mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 360mV @ 300mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at -4A.Emitter base voltages of -7V can achieve high levels of efficiency.A transition frequency of 120MHz is present in the part.An input voltage of 140V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 4A volts.

DXT2014P5-13 Features

the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -360mV
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at -7V
a transition frequency of 120MHz

DXT2014P5-13 Applications

There are a lot of Diodes Incorporated DXT2014P5-13 applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface