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DXT2014P5-13

DXT2014P5-13

DXT2014P5-13

Diodes Incorporated

DXT2014P5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXT2014P5-13 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerDI™ 5
Number of Pins 3
Weight 95.991485mg
Transistor Element Material SILICON
Manufacturer Package Identifier POWERDI-5
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 3.2W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 120MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DXT2014P5
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 3.2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 120MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 5V
Current - Collector Cutoff (Max) 20nA ICBO
JEDEC-95 Code TO-252
Vce Saturation (Max) @ Ib, Ic 360mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 140V
Transition Frequency 120MHz
Collector Emitter Saturation Voltage -360mV
Max Breakdown Voltage 140V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) -7V
Continuous Collector Current -4A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.222802 $0.222802
10 $0.210190 $2.1019
100 $0.198293 $19.8293
500 $0.187068 $93.534
1000 $0.176480 $176.48
DXT2014P5-13 Product Details

DXT2014P5-13 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 5V.With a collector emitter saturation voltage of -360mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 360mV @ 300mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at -4A.Emitter base voltages of -7V can achieve high levels of efficiency.A transition frequency of 120MHz is present in the part.An input voltage of 140V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 4A volts.

DXT2014P5-13 Features


the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -360mV
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at -7V
a transition frequency of 120MHz

DXT2014P5-13 Applications


There are a lot of Diodes Incorporated DXT2014P5-13 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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