KSA1015GRTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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KSA1015GRTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LIFETIME (Last Updated: 18 hours ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Max Power Dissipation
400mW
Terminal Position
BOTTOM
Current Rating
-150mA
Frequency
80MHz
Base Part Number
KSA1015
Number of Elements
1
Element Configuration
Single
Power Dissipation
400mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
80MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
80MHz
Collector Emitter Saturation Voltage
-300mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-5V
hFE Min
70
Height
5.33mm
Length
5.2mm
Width
4.19mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.04685
$0.0937
6,000
$0.04095
$0.2457
10,000
$0.03506
$0.3506
50,000
$0.03114
$1.557
100,000
$0.02786
$2.786
KSA1015GRTA Product Details
KSA1015GRTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 6V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -150mA.As a result, the part has a transition frequency of 80MHz.This device can take an input voltage of 50V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.
KSA1015GRTA Features
the DC current gain for this device is 200 @ 2mA 6V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 300mV @ 10mA, 100mA the emitter base voltage is kept at -5V the current rating of this device is -150mA a transition frequency of 80MHz
KSA1015GRTA Applications
There are a lot of ON Semiconductor KSA1015GRTA applications of single BJT transistors.