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KSA1015GRTA

KSA1015GRTA

KSA1015GRTA

ON Semiconductor

KSA1015GRTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA1015GRTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LIFETIME (Last Updated: 18 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 400mW
Terminal Position BOTTOM
Current Rating -150mA
Frequency 80MHz
Base Part Number KSA1015
Number of Elements 1
Element Configuration Single
Power Dissipation 400mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 80MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 80MHz
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
hFE Min 70
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.04685 $0.0937
6,000 $0.04095 $0.2457
10,000 $0.03506 $0.3506
50,000 $0.03114 $1.557
100,000 $0.02786 $2.786
KSA1015GRTA Product Details

KSA1015GRTA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 6V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -150mA.As a result, the part has a transition frequency of 80MHz.This device can take an input voltage of 50V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.

KSA1015GRTA Features


the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 80MHz

KSA1015GRTA Applications


There are a lot of ON Semiconductor KSA1015GRTA applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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