2SD1766T100R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SD1766T100R Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Voltage - Rated DC
32V
Max Power Dissipation
2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
2A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD1766
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
32V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 500mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
32V
Transition Frequency
100MHz
Max Breakdown Voltage
32V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
hFE Min
82
VCEsat-Max
0.8 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.471600
$0.4716
10
$0.444906
$4.44906
100
$0.419722
$41.9722
500
$0.395964
$197.982
1000
$0.373551
$373.551
2SD1766T100R Product Details
2SD1766T100R Overview
This device has a DC current gain of 180 @ 500mA 3V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.As a result, the part has a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 32V volts.A maximum collector current of 2A volts can be achieved.
2SD1766T100R Features
the DC current gain for this device is 180 @ 500mA 3V the vce saturation(Max) is 800mV @ 200mA, 2A the emitter base voltage is kept at 5V the current rating of this device is 2A a transition frequency of 100MHz
2SD1766T100R Applications
There are a lot of ROHM Semiconductor 2SD1766T100R applications of single BJT transistors.