2SD1766T100R Overview

This device has a DC current gain of 180 @ 500mA 3V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.As a result, the part has a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 32V volts.A maximum collector current of 2A volts can be achieved.

2SD1766T100R Features

the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz

2SD1766T100R Applications

There are a lot of ROHM Semiconductor 2SD1766T100R applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver