Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2SD1766T100R

2SD1766T100R

2SD1766T100R

ROHM Semiconductor

2SD1766T100R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD1766T100R Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN COPPER
Subcategory Other Transistors
Voltage - Rated DC 32V
Max Power Dissipation 2W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 2A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD1766
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 32V
Transition Frequency 100MHz
Max Breakdown Voltage 32V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 82
VCEsat-Max 0.8 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.471600 $0.4716
10 $0.444906 $4.44906
100 $0.419722 $41.9722
500 $0.395964 $197.982
1000 $0.373551 $373.551
2SD1766T100R Product Details

2SD1766T100R Overview


This device has a DC current gain of 180 @ 500mA 3V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.As a result, the part has a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 32V volts.A maximum collector current of 2A volts can be achieved.

2SD1766T100R Features


the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz

2SD1766T100R Applications


There are a lot of ROHM Semiconductor 2SD1766T100R applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News