MPSA92RL1G Overview
In this device, the DC current gain is 25 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.50MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 300V volts.A maximum collector current of 500mA volts is possible.
MPSA92RL1G Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92RL1G Applications
There are a lot of ON Semiconductor MPSA92RL1G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
