2N4401TF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 1V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 750mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 250MHz.Single BJT transistor can be broken down at a voltage of 40V volts.Maximum collector currents can be below 600mA volts.
2N4401TF Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
2N4401TF Applications
There are a lot of ON Semiconductor 2N4401TF applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
