2N4403TA Overview

This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 750mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at -5V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -600mA.The part has a transition frequency of 200MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.In extreme cases, the collector current can be as low as 600mA volts.

2N4403TA Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz

2N4403TA Applications

There are a lot of ON Semiconductor 2N4403TA applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface