JAN2N3501 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 15mA, 150mA.Emitter base voltages of 6V can achieve high levels of efficiency.Collector current can be as low as 300mA volts at its maximum.
JAN2N3501 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
JAN2N3501 Applications
There are a lot of Microsemi Corporation JAN2N3501 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
