2N4922G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.When collector current reaches its maximum, it can reach 1A volts.

2N4922G Features

the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz

2N4922G Applications

There are a lot of ON Semiconductor 2N4922G applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface