MJD45H11-001 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.A VCE saturation (Max) of 1V @ 400mA, 8A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -8A.Single BJT transistor contains a transSingle BJT transistorion frequency of 90MHz.Maximum collector currents can be below 8A volts.

MJD45H11-001 Features

the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 90MHz

MJD45H11-001 Applications

There are a lot of ON Semiconductor MJD45H11-001 applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter