2N5088G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 100μA 5V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 3V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 50MHz is present in the part.A maximum collector current of 50mA volts can be achieved.

2N5088G Features

the DC current gain for this device is 300 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 50MHz

2N5088G Applications

There are a lot of ON Semiconductor 2N5088G applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface