2N5088RLRA Overview

In this device, the DC current gain is 300 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 3V can achieve high levels of efficiency.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 50MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.

2N5088RLRA Features

the DC current gain for this device is 300 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 50MHz

2N5088RLRA Applications

There are a lot of ON Semiconductor 2N5088RLRA applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver