2N5194G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N5194G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
-4A
Frequency
2MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N5194
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Gain Bandwidth Product
2MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1.5A 2V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1.4V @ 1A, 4A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
2MHz
Collector Emitter Saturation Voltage
1.4V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Height
11.0998mm
Length
7.7978mm
Width
2.9972mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.081040
$0.08104
500
$0.059588
$29.794
1000
$0.049657
$49.657
2000
$0.045557
$91.114
5000
$0.042576
$212.88
10000
$0.039606
$396.06
15000
$0.038304
$574.56
50000
$0.037663
$1883.15
2N5194G Product Details
2N5194G Overview
DC current gain in this device equals 25 @ 1.5A 2V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.4V @ 1A, 4A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -4A.2MHz is present in the transition frequency.The maximum collector current is 4A volts.
2N5194G Features
the DC current gain for this device is 25 @ 1.5A 2V a collector emitter saturation voltage of 1.4V the vce saturation(Max) is 1.4V @ 1A, 4A the emitter base voltage is kept at 5V the current rating of this device is -4A a transition frequency of 2MHz
2N5194G Applications
There are a lot of ON Semiconductor 2N5194G applications of single BJT transistors.