2N3906G Overview
This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.A VCE saturation (Max) of 400mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 200mA current rating.The part has a transition frequency of 250MHz.Collector current can be as low as 200mA volts at its maximum.
2N3906G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 250MHz
2N3906G Applications
There are a lot of ON Semiconductor 2N3906G applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
