2SB1203S-TL-E Overview
In this device, the DC current gain is 70 @ 500mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -280mV allows maximum design flexibility.A VCE saturation (Max) of 550mV @ 150mA, 3A means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at -6V to achieve high efficiency.A breakdown input voltage of 50V volts can be used.Collector current can be as low as 5A volts at its maximum.
2SB1203S-TL-E Features
the DC current gain for this device is 70 @ 500mA 2V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 550mV @ 150mA, 3A
the emitter base voltage is kept at -6V
2SB1203S-TL-E Applications
There are a lot of ON Semiconductor 2SB1203S-TL-E applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
