2SA1774TLQ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is essential to maintain the continuous collector voltage at -150mA to achieve high efficiency.Keeping the emitter base voltage at -6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 140MHz is present in the part.An input voltage of 50V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.
2SA1774TLQ Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
the current rating of this device is -150mA
a transition frequency of 140MHz
2SA1774TLQ Applications
There are a lot of ROHM Semiconductor 2SA1774TLQ applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter