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2N6673

  • 2N6673 - 2N6673 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
  • 2N6673 - 2N6673 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

2N6673

2N6673

Microsemi Corporation

2N6673 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N6673 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingLead, Tin
Mount Through Hole
Package / Case TO-3
Transistor Element Material SILICON
PackagingBulk
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation150W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count2
JESD-30 Code O-MBFM-P2
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Configuration Single
Power Dissipation150W
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 8A
Transition Frequency 15MHz
DC Current Gain-Min (hFE) 10
RoHS StatusNon-RoHS Compliant
In-Stock:105 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$83.29230$8329.23

2N6673 Product Details

2N6673 Overview


15MHz is present in the transition frequency.A maximum collector current of 8A volts is possible.

2N6673 Features


a transition frequency of 15MHz

2N6673 Applications


There are a lot of Microsemi Corporation 2N6673 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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