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2N5461

2N5461

2N5461

ON Semiconductor

2N5461 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

2N5461 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Weight 201mg
Operating Temperature -65°C~135°C TJ
Packaging Bulk
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 10V
Max Power Dissipation 350mW
Current Rating 10mA
Base Part Number 2N5461
Element Configuration Single
Power Dissipation 350mW
Power - Max 350mW
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 15V
Breakdown Voltage 40V
Drain to Source Voltage (Vdss) 40V
Continuous Drain Current (ID) 10mA
Gate to Source Voltage (Vgs) 40V
Input Capacitance 7pF
Current - Drain (Idss) @ Vds (Vgs=0) 2mA @ 15V
Voltage - Cutoff (VGS off) @ Id 1V @ 1μA
Voltage - Breakdown (V(BR)GSS) 40V
Height 5.33mm
Length 5.2mm
Width 4.19mm
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
2N5461 Product Details

2N5461 Description


The ONSEMI 2N5461 Transistor is a P-channel JFET which has opposite current directions and voltage polarities when compared to the n-channel JFET  designed primarily for low-level audio and general purpose applications with high impedance signal sources. 



2N5461 Features


  • Pb-Free Packages are Available

  • Operating and Storage Junction Temperature Range -55 to +150℃

  • Drain-Gate Voltage... - 40 V

  • VGS Gate-Source Voltage... 40 V



2N5461 Applications


  • Analog switching and chopper applications


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