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PN5434_D27Z

PN5434_D27Z

PN5434_D27Z

ON Semiconductor

PN5434_D27Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

PN5434_D27Z Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N5434
Power - Max 350mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 10V VGS
Current - Drain (Idss) @ Vds (Vgs=0) 30mA @ 15V
Voltage - Cutoff (VGS off) @ Id 1V @ 3nA
Voltage - Breakdown (V(BR)GSS) 25V
Resistance - RDS(On) 10Ohms
PN5434_D27Z Product Details

PN5434_D27Z                     Description

 

N-Channel – For an N-Channel MOSFET, the source is connected to ground. To turn the MOSFET on, we need to raise the voltage on the gate. To turn it off we need to connect the gate to ground. P-Channel – The source is connected to the power rail (Vcc).This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 58. See J108 for characteristics.

 

PN5434_D27Z                  Applications


 analog applications

 digital switching applications

 

PN5434_D27Z                  Features

Performance

? 100 MHz ARM Cortex-M4 core with DSP instructions

delivering 1.25 Dhrystone MIPS per MHz

Memories and memory interfaces

? Up to 128 KB of embedded flash and 16 KB of RAM

? Preprogrammed Kinetis flashloader for one-time, insystem factory programming

System peripherals

 


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