PN5434_D27Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
PN5434_D27Z Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N5434
Power - Max
350mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
30pF @ 10V VGS
Current - Drain (Idss) @ Vds (Vgs=0)
30mA @ 15V
Voltage - Cutoff (VGS off) @ Id
1V @ 3nA
Voltage - Breakdown (V(BR)GSS)
25V
Resistance - RDS(On)
10Ohms
PN5434_D27Z Product Details
PN5434_D27Z Description
N-Channel – For an N-Channel MOSFET, the source is connected to ground. To turn the MOSFET on, we need to raise the voltage on the gate. To turn it off we need to connect the gate to ground. P-Channel – The source is connected to the power rail (Vcc).This device is designed for analog or digital switching applications wherevery low On Resistance is mandatory. Sourced from Process 58. SeeJ108 for characteristics.
PN5434_D27Z Applications
analog applications
digital switching applications
PN5434_D27Z Features
Performance
? 100 MHz ARM Cortex-M4 core with DSP instructions
delivering 1.25 Dhrystone MIPS per MHz
Memories and memory interfaces
? Up to 128 KB of embedded flash and 16 KB of RAM
? Preprogrammed Kinetis flashloader for one-time, insystem factory programming