2N5886G Overview
This device has a DC current gain of 20 @ 10A 4V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 25A current rating.As you can see, the part has a transition frequency of 4MHz.When collector current reaches its maximum, it can reach 25A volts.
2N5886G Features
the DC current gain for this device is 20 @ 10A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 4V @ 6.25A, 25A
the emitter base voltage is kept at 5V
the current rating of this device is 25A
a transition frequency of 4MHz
2N5886G Applications
There are a lot of ON Semiconductor 2N5886G applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
