Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2N6517

2N6517

2N6517

ON Semiconductor

2N6517 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N6517 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 350V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 500mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number 2N6517
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Collector Emitter Breakdown Voltage 350V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 6V
hFE Min 20
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
2N6517 Product Details
2N6517 Description


2N6517 NPN transistor is one of two types of bipolar transistors that consists of two layers of N-type doped areas sandwiched between two layers of P-type doped semiconductor (base). 2N6517 transistor is in a forward amplifying condition when the base voltage is greater than the emitter voltage and the collector voltage is higher than the base voltage. ON Semiconductor 2N6517 are designed for use in general?purpose amplifier and switching applications.


2N6517 Features


DC Current Gain Specified to 7.0 Amperes
hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices
Collector-Emitter Sustaining Voltage
VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292
High Current Gain Bandwidth Product


2N6517 Applications


Switching applications
General-purpose amplifier

Related Part Number

BUJ303CD,118
BC548A_J35Z
BC548A_J35Z
$0 $/piece
BD244ATU
BD244ATU
$0 $/piece
2N5192R
KSC1173YTSTU
TN6714A_D26Z
BD441
BD441
$0 $/piece
BDW83A-S
BDW83A-S
$0 $/piece

Get Subscriber

Enter Your Email Address, Get the Latest News